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| 1.5V Drive Pch MOSFET RZF020P01 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT3 0.2Max. Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate (2) Source (3) Drain Abbreviated symbol : ZE Applications Switching Inner circuit (3) Packaging specifications Package Type RZF020P01 Code Basic ordering unit (pieces) Taping TL 3000 1 (2) 1 ESD PROTECTION DIODE 2 BODY DIODE 2 (1) (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits -12 10 2 6 -0.6 -6 0.8 150 -55 to +150 Unit V V A A A A W C C Total power dissipation Channel temperature Range of Storage temperature 1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board Thermal resistance Parameter Channel to ambient When mounted on a ceramic board. Symbol Rth (ch-a) Limits 156 Unit C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.05 - Rev.A RZF020P01 Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown voltage V(BR) DSS -12 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.3 - Static drain-source on-state - RDS (on) resistance - - 2 Yfs Forward transfer admittance - Ciss Input capacitance - Coss Output capacitance - Reverse transfer capacitance Crss td (on) - Turn-on delay time tr - Rise time td (off) - Turn-off delay time tf - Fall time - Total gate charge Qg - Gate-source charge Qgs Gate-drain charge - Qgd Pulsed Data Sheet Typ. - - - - 75 105 150 200 - 770 75 60 10 17 65 35 6.5 1.3 0.8 Max. 10 - -1 -1.0 105 145 225 400 - - - - - - - - - - - Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -12V, VGS=0V VDS= -6V, ID= -1mA ID= -2A, VGS= -4.5V ID= -1A, VGS= -2.5V ID= -1A, VGS= -1.8V ID= -0.4A, VGS= -1.5V VDS= -6V, ID= -2A VDS= -6V VGS=0V f=1MHz VDD -6V ID= -1A VGS= -4.5V RL 6 RG=10 VDD -6V, ID= -2A VGS= -4.5V RL 3, RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -2A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.05 - Rev.A RZF020P01 Electrical characteristics curves 4 3.5 DRAIN CURRENT : -ID [A] 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 VGS= -1.5V -1.6V -2.5V -1.8V -10V -4.5V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 VGS= -1.2V -4.5V -2.5V -1.5V -10V -1.8V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 10 VDS= -6V Pulsed Data Sheet 1 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 0.01 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] Ta=25C Pulsed 1000 VGS= -4.5V Pulsed 1000 VGS= -2.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] 1000 VGS= -1.8V Pulsed 1000 VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= -6V Pulsed 100 100 Ta=125C Ta=75C Ta=25C Ta= -25C Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta= -25C Ta=25C Ta=75C Ta=125C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.05 - Rev.A RZF020P01 10 REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS=0V Pulsed 500 Ta=25C Pulsed SWITCHING TIME : t [ns] 1000 td(off) tf 100 400 ID = -1A ID = -2A 200 Ta=25C VDD = -6V VGS=-4.5V R G=10 Pulsed Data Sheet 1 300 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 10 tr td(on) 100 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0 0 2 4 6 8 10 1 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 10000 CAPACITANCE : C [pF] 4 Ta=25C f=1MHz VGS=0V Ciss 1000 3 2 Ta=25C VDD = -6V ID = -2.0A R G= 10 Pulsed 0 1 2 3 4 5 6 7 8 Coss 100 Crss 1 0 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Measurement circuit Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 50% 90% 10% 90% td(off) toff tf VDS 90% td(on) ton tr Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG (Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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